8 Patents
- US123567042025Field Effect Transistor with Contact via Structures That Are Laterally Spaced by a Sub-lithographic Distance and Method of Making the Same
Sandisk Technologies, Inc.
0 cites - US122794452025Field Effect Transistors with Gate Fins and Method of Making the Same
Sandisk Technologies, Inc.
0 cites - US120150842024Field Effect Transistors with Gate Fins and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US119787742024High Voltage Field Effect Transistor with Vertical Current Paths and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US119676262024Field Effect Transistors with Gate Fins and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US118376402023Transistors with Stepped Contact via Structures and Methods of Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US116263972023Gate Material-based Capacitor and Resistor Structures and Methods of Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US115750152023High Voltage Field Effect Transistors with Self-aligned Silicide Contacts and Methods for Making the Same
SANDISK TECHNOLOGIES LLC
0 cites