21 Patents
- US124083992025Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US124023742025Electronic Device Including Two-dimensional Material and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123566682025Field Effect Transistor Including Channels Having a Hollow Closed Cross-sectional Structure and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123410632025Interconnect Structure, Electronic Device Including the Same, and Method of Manufacturing Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US123343572025Method of Forming Material Layer
Research & Business Foundation Sungkyunkwan University
0 cites - US123362592025Electronic Device Including Two-dimensional Material and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US122552442025Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - US122119042025Black Phosphorus-two Dimensional Material Complex and Method of Manufacturing the Same
UNIST (ULSAN National Institute Of Science And Technology)
0 cites - US121991292025Image Sensors Integrated with Infrared Sensors and Electronic Devices Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121426972024Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
Samsung Electronics Co., Ltd.
0 cites - US121227322024Functionalized Polycyclic Aromatic Hydrocarbon Compound and Light-emitting Device Including the Same
Research & Business Foundation Sungkyunkwan University
0 cites - 0 cites
- US120626972024Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US120275882024Field Effect Transistor Including Channel Formed of 2D Material
Samsung Electronics Co., Ltd.
0 cites - US120028822024Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US119618982024Method of Patterning Two-dimensional Material Layer on Substrate, and Method of Fabricating Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US119357902024Field Effect Transistor and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US118309522023Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115880342023Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - US115631162023Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites