8 Patents
- US124023742025Electronic Device Including Two-dimensional Material and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123566682025Field Effect Transistor Including Channels Having a Hollow Closed Cross-sectional Structure and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123362592025Electronic Device Including Two-dimensional Material and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121426972024Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
Samsung Electronics Co., Ltd.
0 cites - US119618982024Method of Patterning Two-dimensional Material Layer on Substrate, and Method of Fabricating Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US119357902024Field Effect Transistor and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US118309522023Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites