30 Patents
- US124842602025Vertical NAND Flash Memory Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US124083992025Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US123781202025Wiring Including Graphene Layer and Method of Manufacturing the Same
Seoul National University R&DB Foundation
0 cites - US123566682025Field Effect Transistor Including Channels Having a Hollow Closed Cross-sectional Structure and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122724022025Vertical Nonvolatile Memory Device Including Memory Cell String
Samsung Electronics Co., Ltd.
0 cites - US122681062025Nonvolatile Memory Device and Operating Method of the Same
President And Fellows Of Harvard College
0 cites - US122552442025Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - US121991292025Image Sensors Integrated with Infrared Sensors and Electronic Devices Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121932352025Nonvolatile Memory Device and Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121836792024Interconnect Structure and Electronic Apparatus Including the Same
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US121478882024Neural Computer Including Image Sensor Capable of Controlling Photocurrent
President And Fellows Of Harvard College
0 cites - US121398142024Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US121426972024Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120806492024Semiconductor Memory Device and Apparatus Including the Same
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US120626972024Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US120403602024Semiconductor Device Including Metal-2 Dimensional Material-semiconductor Contact
Samsung Electronics Co., Ltd.
0 cites - US120340492024Superlattice Structure Including Two-dimensional Material and Device Including the Superlattice Structure
Center For Technology Licensing At Cornell University
0 cites - US120275882024Field Effect Transistor Including Channel Formed of 2D Material
Samsung Electronics Co., Ltd.
0 cites - US120028822024Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US119357902024Field Effect Transistor and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US118309522023Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117981712023Weakly Supervised Semantic Segmentation Device and Method Based on Pseudo-masks
UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY
0 cites - US117037532023Pellicles for Photomasks, Reticles Including the Photomasks, and Methods of Manufacturing the Pellicles
Samsung Electronics Co., Ltd.
0 cites - US116241272023Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (Ulsan National Institute Of Science And Technology)
0 cites - US116007742023Nonvolatile Memory Device and Operating Method of the Same
President And Fellows Of Harvard College
0 cites - US115880342023Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - US115750112023Superlattice Structure Including Two-dimensional Material and Device Including the Superlattice Structure
Center For Technology Licensing At Cornell University
0 cites - US115631162023Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites