Patents/Inventors

Mingmei Wang

Fremont, CAUS14 patents

10 Patents

US126222342026
Selective In-situ Carbon-based Mask Protection
Tokyo Electron Limited
0 cites
US124244472025
Method to Selectively Etch Silicon Nitride to Silicon Oxide Using Water Crystallization
Tokyo Electron Limited
0 cites
US124008632025
Method for Etching for Semiconductor Fabrication
TOKYO ELECTRON LIMITED
0 cites
US123082122025
In-situ Adsorbate Formation for Plasma Etch Process
Tokyo Electron Limited
0 cites
US122371722025
Etch Process for Oxide of Alkaline Earth Metal
Tokyo Electron Limited
0 cites
US121318872024
Plasma Processing System and Method Using Radio Frequency and Microwave Power
Tokyo Electron Limited
0 cites
US121319142024
Selective Etching with Fluorine, Oxygen and Noble Gas Containing Plasmas
Université D'orleans
0 cites
US118878152024
Plasma Processing System and Method Using Radio Frequency (RF) and Microwave Power
Tokyo Electron Limited
0 cites
US118374712023
Methods of Patterning Small Features
Tokyo Electron Limited
0 cites
US118043802023
High-throughput Dry Etching of Films Containing Silicon-oxygen Components or Silicon-nitrogen Components by Proton-mediated Catalyst Formation
Tokyo Electron Limited
0 cites