6 Patents
- US126220882026Functional Polycrystalline Silicon Tunneling Silicon Oxide Passivated Contact Structure and Preparation Method Thereof
Ningbo Institute Of Materials Technology And Engineering, Chinese Academy Of Sciences
0 cites - US125140262025Transparent Laminated Passivation Film Structure, and Preparation Method and Application Thereof
Teranergy Technology Co., Ltd.
0 cites - US125074992025Laminated Dopant Source Structure, Relevant High-quality Emitter and Preparation Method Thereof
NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES
0 cites - US124191362025Ultrathin Silicon Oxynitride Interface Material, Tunnel Oxide Passivated Structure and Preparation Methods and Applications Thereof
TERANERGY TECHNOLOGY CO., Ltd.
0 cites - US124144032025Modified Tunnel Oxide Layer and Preparation Method, Topcon Structure and Preparation Method, and Solar Cell
TERANERGY TECHNOLOGY CO., Ltd.
0 cites - US124024352025Surface Composite Film Structure with Longitudinal Transmission Cutoff and Transverse Transmission Conduction, and Preparation Method and Application Thereof
TERANERGY TECHNOLOGY CO., Ltd.
0 cites