9 Patents
- 0 cites
- US124647382025Integrated Chip Including a Device with a Reduced Surface Field Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123026202025Field Plate Structure to Enhance Transistor Breakdown Voltage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121764072024Method of Forming a Transistor Device with a Gate Structure Having a Pair of Recess Regions and a Resistive Protection Layer Within
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120275262024Breakdown Voltage Capability of High Voltage Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US119788102024Method for Forming an IC Including a Varactor with Reduced Surface Field Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119234292024Plate Design to Decrease Noise in Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119161152024Field Plate Structure to Enhance Transistor Breakdown Voltage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites