20 Patents
- US125573962026Device Having Nanostructure Electrostatic Discharge Structure and Method
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123362462025Semiconductor Structures with a Hybrid Substrate
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123242102025Bipolar Junction Transistor with Gate Over Terminals
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123176022025Forming ESD Devices Using Multi-gate Compatible Processes
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US122306342025Semiconductor Devices and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122132972025Semiconductor Devices with Threshold Voltage Modulation Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121660712024Dielectric Fins with Air Gap and Backside Self-aligned Contact
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120785512024Complementary Bipolar Junction Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120517292024Bipolar Junction Transistor with Gate Over Terminals
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119489362024Forming ESD Devices Using Multi-gate Compatible Processess
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118430382023Bipolar Junction Transistor with Gate Over Terminals
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118374592023Method and Structure for Diodes with Backside Contacts
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116887672023Semiconductor Device Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116370992023Forming ESD Devices Using Multi-gate Compatible Processes
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116006952023Dielectric Fins with Air Gap and Backside Self-aligned Contact
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites