10 Patents
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- US123639382025Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121007572024Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120878202024Semiconductor Device Having a Plurality of III-V Semiconductor Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
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- US117424192023Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116984042023Universal Switching Platform and Method for Testing Dynamic Characteristics of a Device
Device Dynamics Lab Co., Ltd.
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