Min Tae Ryu

7 Patents

• US126105882026

  Semiconductor Device and Semiconductor Memory Cell Including the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US125433052026

  Memory Device

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US124083822025

  Semiconductor Memory Device Having a Confinement Layer with a Two-dimensional Electron Gas in the Confinement Layer

  IUCF-HYU (Industry-university Cooperation Foundation Hanyang University)

  0 cites
• US124023012025

  Semiconductor Memory Device Having Shield Layer Between Peripheral Circuit and Cell Array Structures

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US120807912024

  Semiconductor Memory Device and Method for Fabricating the Same

  Samsung Electronics Co., Ltd.

  0 cites
• US120756112024

  Semiconductor Memory Device

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US118876532024

  Memory Devices

  Samsung Electronics Co., Ltd.

  0 cites