15 Patents
- US122437732025Liner and Barrier Layer in Dual Damascene Cu Interconnect for Enhanced EM and Process
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US121837952024Notch Shape of Trench Gate Bottom Corner for Better Breakdown Voltage of Power MOSFET and IGBT with Good Trade Off to Ron and Ox Reliability
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US121549432024Super Junction Power Device and Method of Making the Same
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - 0 cites
- US121487932024High Voltage Semiconductor Device Comprising a Combined Junction Terminal Protection Structure with a Ferroelectric Material
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US121366472024Super Junction Power Device and Method of Making the Same
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US121319462024Method to Form Contacts with Multiple Depth by Enhanced CESL
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US120948732024Sige HBT with Graphene Extrinsic Base and Methods
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US119845002024Structure and Method of New Power MOS and IGBT with Built-in Multiple VT'S
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US119787022024Simultaneous Self-forming Hea Barrier and Cu Seeding Layers for Cu Interconnect
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US118626742024High Voltage Semiconductor Device Comprising a Combined Junction Terminal Protection Structure with a Ferroelectric Material and Method of Making the Same
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US118347542023ALD Method with Multi-chambers for Sic or Multi-elements Epitaxial Growth
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US117157582023Super Junction Power Device and Method of Making the Same
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - US116770192023IGBT Device with Narrow Mesa and Manufacture Thereof
Sien (Qingdao) Integrated Circuits Co., Ltd.
0 cites - 0 cites