20 Patents
- US126105882026Semiconductor Device and Semiconductor Memory Cell Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US125934402026Semiconductor Device Including Single Crystal Semiconductor Pattern with Complementary Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125324772026Three-dimensional (3D) Semiconductor Memory Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US124190492025Semiconductor Memory Device Including Symmetrical Channel Patterns and Wordlines
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124083822025Semiconductor Memory Device Having a Confinement Layer with a Two-dimensional Electron Gas in the Confinement Layer
IUCF-HYU (Industry-university Cooperation Foundation Hanyang University)
0 cites - US124023012025Semiconductor Memory Device Having Shield Layer Between Peripheral Circuit and Cell Array Structures
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123566252025Semiconductor Memory Device and Method for Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120807912024Semiconductor Memory Device and Method for Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120481412024Semiconductor Memory Device and a Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US119031842024Semiconductor Memory Devices and Methods for Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US115630052023Three-dimensional Semiconductor Device with a Bit Line Perpendicular to a Substrate
SAMSUNG ELECTRONICS CO., Ltd.
0 cites