5 Patents
- US122610872025Methods of Manufacturing Semiconductor Devices by Etching Active Fins Using Etching Masks and Forming Source/drain Layers on the Active Fins
SAMSUNG ELECTRONICS CO., Ltd.
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- US118307752023Methods of Manufacturing Semiconductor Devices by Etching Active Fins Using Etching Masks
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- 0 cites