3 Patents
- US126106052026IC Structure with Gate Electrode Fully Within V-shaped Cavity
Globalfoundries U.S. Inc.
0 cites - US124009272025High-mobility-electron Transistors Having Heat Dissipating Structures
Globalfoundries U.S. Inc.
0 cites - US122306732025Field-effect Transistors Having a Gate Electrode Positioned Inside a Substrate Recess
Globalfoundries U.S. Inc.
0 cites