13 Patents
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- US124603142025Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
0 cites - US121958782025Sic Crystals with an Optimal Orientation of Lattice Planes for Fissure Reduction and Method of Producing Same
Sicrystal GmbH
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- US121579552024Method for Simultaneously Manufacturing More Than One Single Crystal of a Semiconductor Material by Physical Vapor Transport
Sicrystal GmbH
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- US117812452023Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
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- US116241242023Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
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- US115606432023System for Efficient Manufacturing of a Plurality of High-quality Semiconductor Single Crystals by Physical Vapor Transport
Sicrystal GmbH
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