3 Patents
- US124713242025Power Semiconductor Device Having an Electrode with an Embedded Material
Infineon Technologies Austria AG
0 cites - US123410122025Method for Annealing a Gate Insulation Layer on a Wide Band Gap Semiconductor Substrate
Infineon Technologies AG
0 cites - US117284272023Power Semiconductor Device Having a Strain-inducing Material Embedded in an Electrode
Infineon Technologies Austria AG
0 cites