Michael Mutch

7 Patents

• US121913542025

  Vertical Transistors Having at Least 50% Grain Boundaries Offset Between Top and Bottom Source/drain Regions and the Channel Region That Is Vertically Therebetween

  Micron Technology, Inc.

  0 cites
• US120574722024

  Devices Comprising Crystalline Materials

  Micron Technology, Inc.

  0 cites
• US119355742024

  Memory Cells and Methods of Forming a Capacitor Including Current Leakage Paths Having Different Total Resistances

  Micron Technology, Inc.

  0 cites
• US117354162023

  Electronic Devices Comprising Crystalline Materials and Related Memory Devices and Systems

  Micron Technology, Inc.

  0 cites
• US117283872023

  Semiconductor Devices Comprising Continuous Crystalline Structures, and Related Memory Devices and Systems

  Micron Technology, Inc.

  0 cites
• US116950712023

  Transistor and Methods of Forming Transistors

  Micron Technology, Inc.

  0 cites
• US115879382023

  Methods of Incorporating Leaker Devices Into Capacitor Configurations to Reduce Cell Disturb, and Capacitor Configurations Incorporating Leaker Devices

  Micron Technology, Inc.

  0 cites