12 Patents
- US125385012026Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US125385502026High-electron-mobility Transistor with Field Plate and Sidewall Spacers
GLOBALFOUNDRIES U.S. Inc.
0 cites - US124165302025Temperature Detection Using Negative Temperature Coefficient Resistor in Gan Setting
GLOBALFOUNDRIES U.S. Inc.
0 cites - US124179752025Electrically Programmable Fuse Over Crystalline Semiconductor Materials
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US121549562024Structure Including Multi-level Field Plate and Method of Forming the Structure
Globalfoundries U.S. Inc.
0 cites - US120280532024Structure Including Resistor Network for Back Biasing FET Stack
Globalfoundries U.S. Inc.
0 cites - 0 cites
- 0 cites
- US116644122023Structure Providing Poly-resistor Under Shallow Trench Isolation and Above High Resistivity Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US116371732023Structure Including Polycrystalline Resistor with Dopant-including Polycrystalline Region Thereunder
Globalfoundries U.S. Inc.
0 cites - US115455772023Semiconductor Structure with In-device High Resistivity Polycrystalline Semiconductor Element and Method
Globalfoundries U.S. Inc.
0 cites