3 Patents
- US124976942025Method of Forming Low-resistivity Ru ALD Through a Bi-layer Process and Related Structures
Samsung Electronics Co., Ltd.
0 cites - US121547872024Methods of Performing Selective Low Resistivity Ru Atomic Layer Deposition and Interconnect Formed Using the Same
The Regents Of The University Of California
0 cites - US119938442024Passivation of Silicon Dioxide Defects for Atomic Layer Deposition
The Regents Of The University Of California
0 cites