12 Patents
- US124329632025Device Having an Air Gap Adjacent to a Contact Plug and Covered by a Doped Dielectric Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124263002025Transistor Source/drain Contacts and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123680982025Methods of Forming Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US122781412025Semiconductor Devices and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121991562025Contact Formation with Reduced Dopant Loss and Increased Dimensions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121836322024Bottom Lateral Expansion of Contact Plugs Through Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121129772024Reducing Spacing Between Conductive Features Through Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119730272024Semiconductor Device and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119014552024Method of Manufacturing a Finfet by Implanting a Dielectric with a Dopant
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116159822023Reducing Spacing Between Conductive Features Through Implantation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites