109 Patents
- US125687712026Memory Cell with Magnetic Access Selector Apparatus
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US125637422026Multi-gate Selector Switches for Memory Cells and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125572932026Ferroelectric Memory Device Using Back-end-of-line (BEOL) Thin Film Access Transistors and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125573422026Transistor, Integrated Circuit, and Manufacturing Method of Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125385222026Access Transistor Including a Metal Oxide Barrier Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125074192025Memory Cell Device with Thin-film Transistor Selector and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124712992025Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US124566762025Semiconductor Device Including First and Second Transistor Channels
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - US124577532025Back-end-of-line Selector for Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124530762025High-density 3D-DRAM Cell with Scaled Capacitors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124462312025Method of Integrating a Capacitor Including a Non-linear Polar Material with a Transistor Through Wafer Bonding
Kepler Computing Inc.
0 cites - US124396062025Gate Coupled Non-linear Polar Material Based Capacitors for Memory and Logic
Kepler Computing Inc.
0 cites - US124023552025Access Transistor Including a Metal Oxide Barrier Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123962112025Thin Film Transistor, Semiconductor Device and Method of Fabricating Thin Film Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US123763122025Methods of Fabricating Planar Capacitors on a Shared Plate Electrode
Kepler Computing Inc.
0 cites - US123693262025Capacitor Devices with Shared Electrode and Methods of Fabrication
Kepler Computing Inc.
0 cites - US123493612025Ferroelectric Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123493632025Ferroelectric Device and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123493652025Drain Coupled Non-linear Polar Material Based Capacitors for Memory and Logic
Kepler Computing Inc.
0 cites - US123493682025Memory Device Including a Semiconducting Metal Oxide Fin Transistor and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123496032025Transistor, Semiconductor Device Including the Same, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123361842025Methods of Fabricating Trench Capacitors on a Shared Plate Electrode
Kepler Computing Inc.
0 cites - 0 cites
- US123241632025Planar Capacitors with Shared Electrode and Methods of Fabrication
Kepler Computing Inc.
0 cites - US123243602025Semiconductor Structure and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123025902025Ferroelectric MFM Capacitor Array and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122898922025Memory Device Structure and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122740712025Capacitor Integrated with a Transistor for Logic and Memory Applications
Kepler Computing Inc.
0 cites - 0 cites
- US122552362025Self-aligned Active Regions and Passivation Layer and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122307162025Semiconductor Structure with Thin Film Transistor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US122197782025Multi-gate Selector Switches for Memory Cells and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122197792025Spacer-defined Back-end Transistor as Memory Selector
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122197802025High-density Memory Device with Planar Thin Film Transistor (TFT) Selector and Methods for Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122060242025Transistors Including Crystalline Raised Active Regions and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US121913892025Layered Structure, Semiconductor Device Including the Same, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121838252024Thin Film Transistor Including a Hydrogen-blocking Dielectric Barrier and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121764332024Polarization Enhancement Structure for Enlarging Memory Window
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121599422024Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121549382024Ferroelectric MFM Capacitor Array and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121488282024Semiconductor Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US121376172024Memory Cell with Magnetic Access Selector Apparatus
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121376212024Intercalated Metal/dielectric Structure for Nonvolatile Memory Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121259202024Dual-layer Channel Transistor and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121259212024Semiconducting Metal Oxide Transistors Having a Patterned Gate and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121208852024Ferroelectric Tunnel Junction Memory Device Using a Magnesium Oxide Tunneling Dielectric and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US120949232024Rapid Thermal Annealing (RTA) Methodologies for Integration of Perovskite-material Based Memory Devices
Kepler Computing Inc.
0 cites - US120807682024Transistor, Semiconductor Structure, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120756332024Vertical Metal Oxide Semiconductor Channel Selector Transistor and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US120625842024Iterative Method of Multilayer Stack Development for Device Applications
Kepler Computing Inc.
0 cites - US120638702024Transistor, Semiconductor Device Including the Same, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120574712024Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US120588732024Memory Device Including a Semiconducting Metal Oxide Fin Transistor and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US120517022024Crystalline Semiconductor Layer Formed in BEOL Processes
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120276322024Semiconductor Structure with Barrier and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120108542024Multi-level Hydrogen Barrier Layers for Memory Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US119978552024Back-end-of-line Selector for Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119555482024Two-dimensional (2D) Material for Oxide Semiconductor (OS) Ferroelectric Field-effect Transistor (fefet) Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119555492024Layered Structure, Semiconductor Device Including the Same, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119490202024Transistor, Integrated Circuit, and Manufacturing Method
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119421472024Semiconducting Metal Oxide Memory Device Using Hydrogen-mediated Threshold Voltage Modulation and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119439332024Ferroelectric Memory Device Using Back-end-of-line (BEOL) Thin Film Access Transistors and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119294362024Thin Transistor Including a Hydrogen-blocking Dielectric Barrier and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119234592024Transistor Including Hydrogen Diffusion Barrier Film and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119161442024Semiconductor Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119178322024Ferroelectric Tunnel Junction Devices with Metal-fe Interface Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119087042024Method of Fabricating a Perovskite-material Based Planar Capacitor Using Rapid Thermal Annealing (RTA) Methodologies
KEPLER COMPUTING Inc.
0 cites - US118944172024Method of Fabricating a Perovskite-material Based Trench Capacitor Using Rapid Thermal Annealing (RTA) Methodologies
KEPLER COMPUTING Inc.
0 cites - US118698432024Integrated Trench and via Electrode for Memory Device Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - 0 cites
- 0 cites
- US118625172024Integrated Trench and via Electrode for Memory Device Applications
KEPLER COMPUTING Inc.
0 cites - US118552262023Thin Film Transistor, Semiconductor Device and Method of Fabricating Thin Film Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118442032023Conductive and Insulative Hydrogen Barrier Layer for Memory Devices
KEPLER COMPUTING Inc.
0 cites - US118442252023Dual Hydrogen Barrier Layer for Memory Devices Integrated with Low Density Film for Logic Structures and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US118390702023High Density Dual Encapsulation Materials for Capacitors and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US118390882023Integrated via and Bridge Electrodes for Memory Array Applications and Methods of Fabrication
KEPLER COMPUTING Inc.
0 cites - US118174852023Self-aligned Active Regions and Passivation Layer and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118056572023Ferroelectric Tunnel Junction Memory Device Using a Magnesium Oxide Tunneling Dielectric and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117914202023Semiconductor Device and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117857802023Semiconductor Device and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US117697902023Rapid Thermal Annealing (RTA) Methodologies for Integration of Perovskite-material Based Trench Capacitors
KEPLER COMPUTING Inc.
0 cites - 0 cites
- US117569872023Ferroelectric Tunnel Junction Devices with Discontinuous Seed Structure and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117570472023Semiconducting Metal Oxide Transistors Having a Patterned Gate and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117514872023Semiconductor Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US117372882023High-density Memory Device with Planar Thin Film Transistor (TFT) Selector and Methods for Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117232912023Intercalated Metal/dielectric Structure for Nonvolatile Memory Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117055162023Polarization Enhancement Structure for Enlarging Memory Window
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116996552023Transistor and Fabrication Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116964532023Vertical Metal Oxide Semiconductor Channel Selector Transistor and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US116463792023Dual-layer Channel Transistor and Methods of Forming Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US115868852023Synapse-inspired Memory Element for Neuromorphic Computing
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115877862023Crystalline Semiconductor Layer Formed in BEOL Processes
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115813352023Ferroelectric Tunnel Junction Devices with Metal-fe Interface Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US115813662023Memory Cell Device with Thin-film Transistor Selector and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US115692502023Ferroelectric Memory Device Using Back-end-of-line (BEOL) Thin Film Access Transistors and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US115692942023Semiconductor Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites - US115576782023Transistor, Integrated Circuit, and Manufacturing Method
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites