Patents/Inventors

Matthias Stockmeier

EgloffsteinDE3 patents

4 Patents

US126107922026
Chamfered Silicon Carbide Substrate and Method of Chamfering
Sicrystal GmbH
0 cites
US124603142025
Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
0 cites
US117812452023
Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
0 cites
US116241242023
Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
0 cites