Patents/Inventors

Matthew V. Metz

Portland, ORUS39 patents

35 Patents

US126160212026
Metal Insulator Metal (MIM) Capacitor Architectures
Intel Corpoation
0 cites
US126105842026
Selective Growth of High-k Oxide on Channel of Gate-all-around Transistors
Intel Corporation
0 cites
US125952762026
Mid-valent Molybdenum Complexes for Thin Film Deposition
Intel Corporation
0 cites
US125751652026
Transistor Devices with High-k Perovskite Gate Dielectrics
Intel Corporation
0 cites
US124955592025
Capacitor with Dual Dielectric Layers
Intel Corporation
0 cites
US124379292025
Capacitor with an Electrically Conductive Layer Coupled with a Metal Layer of the Capacitor
Intel Corporation
0 cites
US124329482025
Compositional Engineering of Schottky Diode
Intel Corporation
0 cites
US123750602025
Digitally Controlled Lithographically-defined Multi-frequency Acoustic Resonators
Intel Corporation
0 cites
US123693822025
Integrated Circuit Structures with Graphene Contacts
Intel Corporation
0 cites
US123289272025
Low Resistance and Reduced Reactivity Approaches for Fabricating Contacts and the Resulting Structures
Intel Coporation
0 cites
US122888032025
Transistor with Isolation Below Source and Drain
Intel Corporation
0 cites
US122611142025
Metallization Stacks with Self-aligned Staggered Metal Lines
Intel Corporation
0 cites
US122243092025
Capacitors with Built-in Electric Fields
Intel Corporation
0 cites
US121502972024
Thin Film Transistors Having a Backside Channel Contact for High Density Memory
Intel Corporation
0 cites
US121193872024
Low Resistance Approaches for Fabricating Contacts and the Resulting Structures
Intel Corporation
0 cites
US120683192024
High Performance Semiconductor Oxide Material Channel Regions for NMOS
Intel Corporation
0 cites
US120481652024
Ferroelectric Capacitors and Methods of Fabrication
Intel Corporation
0 cites
US120094332024
Multi-dielectric Gate Stack for Crystalline Thin Film Transistors
Intel Corporation
0 cites
US119964472024
Field Effect Transistors with Gate Electrode Self-aligned to Semiconductor Fin
Intel Corporation
0 cites
US119800372024
Memory Cells with Ferroelectric Capacitors Separate from Transistor Gate Stacks
Intel Corporation
0 cites
US119787992024
Method for Fabricating Transistor with Thinned Channel
Tahoe Research, Ltd.
0 cites
US119294352024
Ferroelectric Gate Stack for Band-to-band Tunneling Reduction
Intel Corporation
0 cites
US119234102024
Transistor with Isolation Below Source and Drain
Intel Corporation
0 cites
US119232902024
Halogen Treatment for NMOS Contact Resistance Improvement
Intel Corporation
0 cites
US118698892024
Self-aligned Gate Endcap (SAGE) Architectures Without Fin End Gap
Intel Corporation
0 cites
US117842392023
Subfin Leakage Suppression Using Fixed Charge
Intel Corporation
0 cites
US117770292023
Vertical Transistors for Ultra-dense Logic and Memory Applications
Intel Corporation
0 cites
US117642752023
Indium-containing Fin of a Transistor Device with an Indium-rich Core
Intel Corporation
0 cites
US117424072023
Multilayer High-k Gate Dielectric for a High Performance Logic Transistor
Intel Corporation
0 cites
US116769662023
Stacked Transistors Having Device Strata with Different Channel Widths
Intel Corporation
0 cites
US116706822023
FINFET Transistor Having a Doped Sub Fin Structure to Reduce Channel to Substrate Leakage
Tahoe Research, Ltd.
0 cites
US116409612023
III-V Source/drain in Top NMOS Transistors for Low Temperature Stacked Transistor Contacts
Intel Corporation
0 cites
US116371852023
Contact Stacks to Reduce Hydrogen in Semiconductor Devices
Intel Corporation
0 cites
US116317372023
Ingaas Epi Structure and Wet Etch Process for Enabling Iii-v GAA in Art Trench
Intel Corporation
0 cites
US115576582023
Transistors with High Density Channel Semiconductor Over Dielectric Material
Intel Corporation
0 cites