Patents/Inventors

Matthew Metz

Portland, ORUS20 patents

21 Patents

US125001622025
Staggered Vertically Spaced Integrated Circuit Line Metallization with Differential Vias and Metal-selective Deposition
Intel Corporation
0 cites
US124827442025
Subtractively Patterned Interconnect Structures for Integrated Circuits
Intel Corporation
0 cites
US123947162025
Integrated Circuit Interconnect Structures with Graphene Cap
Intel Corporation
0 cites
US123763422025
Passivation Layers for Thin Film Transistors
Intel Corporation
0 cites
US123410652025
Deposition Tool and Method for Filling Deep Trenches
Intel Corporation
0 cites
US123101012025
Gate Dielectrics for Complementary Metal Oxide Semiconductors Transistors and Methods of Fabrication
Intel Corporation
0 cites
US122665702025
Self-aligned Interconnect Structures and Methods of Fabrication
Intel Corporation
0 cites
US122667202025
Transistors with Monocrystalline Metal Chalcogenide Channel Materials
Intel Corporation
0 cites
US121837392024
Ribbon or Wire Transistor Stack with Selective Dipole Threshold Voltage Shifter
Intel Corporation
0 cites
US121007312024
Crystalline Bottom Electrode for Perovskite Capacitors and Methods of Fabrication
Intel Corporation
0 cites
US120274582024
Subtractively Patterned Interconnect Structures for Integrated Circuits
Intel Corporation
0 cites
US119555602024
Passivation Layers for Thin Film Transistors and Methods of Fabrication
Intel Corporation
0 cites
US118879882024
Thin Film Transistor Structures with Regrown Source and Drain
Intel Corporation
0 cites
US118627152024
Vertical Tunneling Field-effect Transistors
Intel Corporation
0 cites
US118430542023
Vertical Architecture of Thin Film Transistors
Intel Corporation
0 cites
US117770132023
Channel Formation for Three Dimensional Transistors
Intel Corporation
0 cites
US117569982023
Source-channel Junction for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
0 cites
US117178062023
Adsorber
Air Liquide Advanced Technologies U.S. LLC
0 cites
US116950812023
Channel Layer Formation for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
0 cites
US116409842023
Transistor Device with (anti)ferroelectric Spacer Structures
Intel Corporation
0 cites
US116161302023
Transistor Device with Variously Conformal Gate Dielectric Layers
Intel Corporation
0 cites