17 Patents
- US125987612026Diode Including a Trench Electrode Subdivided Into at Least First and Second Parts
Infineon Technologies Austria AG
0 cites - US122836212025Semiconductor Device Having a Transistor with Trenches and Mesas
Infineon Technologies Austria AG
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- US120183872024Method for Fabricating a Semiconductor Device Using Wet Etching and Dry Etching and Semiconductor Device
Infineon Technologies Austria AG
0 cites - US119490062024Power Semiconductor Device with P-contact and Doped Insulation Blocks Defining Contact Holes
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US118880612024Power Semiconductor Device Having Elevated Source Regions and Recessed Body Regions
Infineon Technologies Dresden GmbH & Co. KG
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- US118430452023Power Semiconductor Device Having Overvoltage Protection and Method of Manufacturing the Same
Infineon Technologies Austria AG
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- US116109762023Semiconductor Device Including a Transistor with One or More Barrier Regions
Infineon Technologies Austria AG
0 cites - US116109862023Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
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- US115814292023Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
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