Patents/Inventors

Masao Kuriyama

Wuhan HubeiCN7 patents

9 Patents

US125058812025
Semiconductor Device, Programming Method, Memory, Memory System and Electronic Device
Yangtze Memory Technologies Co., Ltd.
0 cites
US124242992025
Digital Verify Failbit Count (VFC) Circuit
Yangtze Memory Technologies Co., Ltd.
0 cites
US123341622025
Digital Verify Failbit Count (VFC) Circuit
Yangtze Memory Technologies Co., Ltd.
0 cites
US123224562025
Digital Verify Failbit Count (VFC) Circuit
Yangtze Memory Technologies Co., Ltd.
0 cites
US123224652025
Digital Verify Failbit Count (VFC) Circuit
Yangtze Memory Technologies Co., Ltd.
0 cites
US122779932025
Page Buffer Circuits in Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US121128022024
Memory Device, the Operation Method Thereof and Memory System
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US119841932024
Page Buffer Circuits in Three-dimensional Memory Devices
Yangtze Memory Technologies Co., Ltd.
0 cites
US119356192024
Page Buffer Circuits of Three-dimensional Memory Device
Yangtze Memory Technologies Co., Ltd.
0 cites