2 Patents
- US122836282025Semiconductor Device, Power Conversion Device and Method of Manufacturing Semiconductor Device
MITSUBISHI ELECTRIC CORPORATION
0 cites - US115576712023Semiconductor Device Having Trench Gate Electrodes Formed in First Pillars Including Source Layers Formed in the First Pillars Being Deeper Into the Substrate Than First Source Layers in Second Pillars
MITSUBISHI ELECTRIC CORPORATION
0 cites