Patents/Inventors

Masami Nakanishi

HsinchuTW4 patents

6 Patents

US121632472024
Method for Producing Silicon Ingot Single Crystal
Globalwafers Co., Ltd.
0 cites
US120766772024
Method for Collecting Dust from Single Crystal Growth System
GLOBALWAFERS CO., Ltd.
0 cites
US120376962024
Method for Producing Si Ingot Single Crystal, Si Ingot Single Crystal, and Apparatus Thereof
Globalwafers Co., Ltd.
0 cites
US120376972024
Apparatus for Producing Si Ingot Single Crystal
Globalwafers Co., Ltd.
0 cites
US120065892024
Purification Apparatus and Method of Purifying Hot Zone Parts
GLOBALWAFERS CO., Ltd.
0 cites
US118450302023
Method for Collecting Dust from Single Crystal Growth System and Dust Collecting System Thereof
Globalwafers Co., Ltd.
0 cites