25 Patents
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- US124777692025Semiconductor Device in Which Current Collapse and Leakage Current Between Source and Drain Regions Are Suppressed
KABUSHIKI KAISHA TOSHIBA
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- USRE0504712025Semiconductor Device and Method for Manufacturing the Same
Toshiba Electronic Devices & Storage Corporation
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- US121549662024Semiconductor Device That Includes a Conductive Member and an Electrode and Method for Manufacturing the Same
KABUSHIKI KAISHA TOSHIBA
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- US120340512024Nitride-based Semiconductor Device and Method of Manufacturing the Same
KABUSHIKI KAISHA TOSHIBA
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- US119676412024Semiconductor Device Including Different Nitride Regions Improving Characteristics of the Semiconductor Device
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
0 cites - US118944522024Semiconductor Device, Method for Manufacturing the Same, Power Circuit, and Computer
Kabushiki Kaisha Toshiba
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- US117570282023Semiconductor Device and Method for Manufacturing the Same
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
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- US116770202023Semiconductor Device Including Different Nitride Regions and Method for Manufacturing Same
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
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