19 Patents
- US125819242026Metal Nitride Diffusion Barrier and Methods of Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125016382025Semiconductor Device Having Reduced Impurity Diffusion
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122665262025Formation of Single Crystal Semiconductors Using Planar Vapor Liquid Solid Epitaxy
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121933182025Method of Forming Semiconductor Device Having Carbon Nanotube
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120517022024Crystalline Semiconductor Layer Formed in BEOL Processes
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120275922024Method of Manufacturing a Heterostructure or a Stacked Semiconductor Structure Having a Silicon-germanium Interface
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US119676472024Localized Heating in Laser Annealing Process
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US119089222024Heterogeneous Semiconductor Device Substrates with High Quality Epitaxy
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118483852023Localized Protection Layer for Laser Annealing Process
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118309472023Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117840452023Formation of Single Crystal Semiconductors Using Planar Vapor Liquid Solid Epitaxy
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US117642892023Method of Manufacturing a Semiconductor Device and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117217212023Germanium Nitride Layers on Semiconductor Structures, and Methods for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116265072023Method of Manufacturing Finfets Having Barrier Layers with Specified Sige Doping Concentration
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116161222023Germanium Containing Nanowires and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115877862023Crystalline Semiconductor Layer Formed in BEOL Processes
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115814242023Method of Manufacturing Finfets Having Barrier Layers with Specified Sige Doping Concentration
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites