Patents/Inventors

Markus Beninger-bina

GrosshelfendorfDE9 patents

12 Patents

US122836212025
Semiconductor Device Having a Transistor with Trenches and Mesas
Infineon Technologies Austria AG
0 cites
US122119452025
Power Diode and Method of Manufacturing a Power Diode
Infineon Technologies Austria AG
0 cites
US120340662024
Power Semiconductor Device Having a Barrier Region
Infineon Technologies AG
0 cites
US119490062024
Power Semiconductor Device with P-contact and Doped Insulation Blocks Defining Contact Holes
Infineon Technologies Dresden GmbH & Co. KG
0 cites
US118880612024
Power Semiconductor Device Having Elevated Source Regions and Recessed Body Regions
Infineon Technologies Dresden GmbH & Co. KG
0 cites
US118430452023
Power Semiconductor Device Having Overvoltage Protection and Method of Manufacturing the Same
Infineon Technologies Austria AG
0 cites
US116950832023
Power Diode and Method of Manufacturing a Power Diode
Infineon Technologies Austria AG
0 cites
US116109762023
Semiconductor Device Including a Transistor with One or More Barrier Regions
Infineon Technologies Austria AG
0 cites
US116109862023
Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
0 cites
US115946212023
Method of Processing a Power Semiconductor Device
Infineon Technologies AG
0 cites
US115814282023
IGBT with Dv/dt Controllability
Infineon Technologies AG
0 cites
US115814292023
Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
0 cites