69 Patents
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- US125503732026Selective Removal of Channel Bodies in Stacked Gate-all-around (GAA) Device Structures
INTEL CORPORATION
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- US124713632025Gate-to-gate Isolation for Stacked Transistor Architecture via Non-selective Dielectric Deposition Structure
Intel Corporation
0 cites - US124577712025Plug and Recess Process for Dual Metal Gate on Stacked Nanoribbon Devices
Intel Corporation
0 cites - US124329642025Co-integrated Gallium Nitride (gan) and Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuit Technology
Intel Corporation
0 cites - US124330072025Transistor Gate Trench Engineering to Decrease Capacitance and Resistance
Intel Corporation
0 cites - US124067132025Probabilistic Computing Devices Based on Stochastic Switching in a Ferroelectric Field-effect Transistor
Intel Corporation
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- US123693992025Gate-to-gate Isolation for Stacked Transistor Architecture via Selective Dielectric Deposition Structure
INTEL CORPORATION
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- US123026182025Gallium Nitride (gan) Selective Epitaxial Windows for Integrated Circuit Technology
Intel Corporation
0 cites - US122926082025Gallium Nitride (gan) Integrated Circuit Technology with Optical Communication
Intel Corporation
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- US122306352025Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Selective Bottom-up Approach
Intel Corporation
0 cites - US121837392024Ribbon or Wire Transistor Stack with Selective Dipole Threshold Voltage Shifter
Intel Corporation
0 cites - US121486902024Microelectronic Devices Having Air Gap Structures Integrated with Interconnect for Reduced Parasitic Capacitances
Tahoe Research, Ltd.
0 cites - US121487472024Gallium Nitride (GAN) Three-dimensional Integrated Circuit Technology
Intel Corporation
0 cites - US121487572024Integration of Si-based Transistors with Non-si Technologies by Semiconductor Regrowth Over an Insulator Material
Intel Corporation
0 cites - US121258882024Group Iii-nitride (III-N) Devices with Reduced Contact Resistance and Their Methods of Fabrication
Intel Corporation
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- US120466522024Plug and Recess Process for Dual Metal Gate on Stacked Nanoribbon Devices
Intel Corporation
0 cites - US120340852024Variable Capacitance Device with Multiple Two-dimensional Electron Gas (2DEG) Layers
Intel Corporation
0 cites - US120276132024III-N Transistor Arrangements for Reducing Nonlinearity of Off-state Capacitance
Intel Corporation
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- US119233712024Voltage Regulator Circuit Including One or More Thin-film Transistors
Intel Corporation
0 cites - US118944652024Deep Gate-all-around Semiconductor Device Having Germanium or Group III-V Active Layer
Google LLC
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- US118626362024Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Selective Bottom-up Approach
Intel Corporation
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- US117990572023Group Iii-nitride Light Emitting Devices Including a Polarization Junction
Intel Corporation
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- US117770222023Transistors Including First and Second Semiconductor Materials Between Source and Drain Regions and Methods of Manufacturing the Same
Intel Corporation
0 cites - US117570272023E-D Mode 2DEG FET with Gate Spacer to Locally Tune VT and Improve Breakdown
Intel Corporation
0 cites - US117283462023Group Iii-nitride (III-N) Devices with Reduced Contact Resistance and Their Methods of Fabrication
Intel Corporation
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- US117157992023Methods and Apparatus to Form Silicon-based Transistors on Group Iii-nitride Materials Using Aspect Ratio Trapping
Intel Corporation
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- US116997042023Monolithic Integration of a Thin Film Transistor Over a Complimentary Transistor
INTEL CORPORATION
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- US116710752023Film Bulk Acoustic Resonator (FBAR) Devices for High Frequency RF Filters
Intel Corporation
0 cites - US116644172023III-N Metal-insulator-semiconductor Field Effect Transistors with Multiple Gate Dielectric Materials
Intel Corporation
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- US116521432023III-N Transistors Integrated with Thin-film Transistors Having Graded Dopant Concentrations And/or Composite Gate Dielectrics
Intel Corporation
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- US116164882023FBAR Devices Having Multiple Epitaxial Layers Stacked on a Same Substrate
Intel Corporation
0 cites - US116108872023Side-by-side Integration of Iii-n Transistors and Thin-film Transistors
Intel Corporation
0 cites - US116109712023Cap Layer on a Polarization Layer to Preserve Channel Sheet Resistance
Intel Corporation
0 cites - US115878622023Microelectronic Devices Having Air Gap Structures Integrated with Interconnect for Reduced Parasitic Capacitances
Tahoe Research, Ltd.
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- US115880372023Planar Transistors with Wrap-around Gates and Wrap-around Source and Drain Contacts
Intel Corporation
0 cites - US115813132023Integration of III-N Transistors and Non-iii-n Transistors by Semiconductor Regrowth
Intel Corporation
0 cites - US115750362023Gallium Nitride Transistors with Source and Drain Field Plates and Their Methods of Fabrication
Intel Corporation
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- US115576672023Group Iii-nitride Devices with Improved RF Performance and Their Methods of Fabrication
Intel Corporation
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