8 Patents
- US125687162026Wafer-scale Separation and Transfer of Gan Material
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US125325302026Doped Aluminum-alloyed Gallium Oxide and Ohmic Contacts
The Government Of The United States Of America As Represented By The Secretary Of The Navy
0 cites - US125139222025Β-ga 2 O 3 Junction Barrier Schottky (JBS) Diodes with Sputtered P-type Nio
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US124462492025Polarization-engineered Heterogeneous Semiconductor Heterostructures
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US122439162025Polarization-engineered Heterogeneous Semiconductor Heterostructures
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US120209852024Transferring Large-area Group Iii-nitride Semiconductor Material and Devices to Arbitrary Substrates
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US118173182023Gan Devices with Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the Same
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites - US116348342023Diamond on Nanopatterned Substrate
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
0 cites