10 Patents
- US125882702026Method of Forming Multiple-vt FETS for CMOS Circuit Applications
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122305702025Integrated Circuit with Buried Power Rail and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US120807032024Semiconductor Cell Blocks Having Non-integer Multiple of Cell Heights
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US117497392023Method of Forming Multiple-vt FETS for CMOS Circuit Applications
Samsung Electronics Co., Ltd.
0 cites - US117272582023Multi-bit, Soc-compatible Neuromorphic Weight Cell Using Ferroelectric Fets
Samsung Electronics Co., Ltd.
0 cites - US116055742023Method of Forming a Thermal Shield in a Monolithic 3-d Integrated Circuit
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US115520672023Semiconductor Cell Blocks Having Non-integer Multiple of Cell Heights
Samsung Electronics Co., Ltd.
0 cites