5 Patents
- US123896222025High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundaries Singapore Pte. Ltd.
0 cites - US122439352025High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US119234462024High Electron Mobility Transistor Devices Having a Silicided Polysilicon Layer
Globalfoundries U.S. Inc.
0 cites - US118429402023Semiconductor Structure Having a Thermal Shunt Below a Metallization Layer and Integration Schemes
Globalfoundries U.S. Inc.
0 cites - US115691702023Substrate with a Buried Conductor Under an Active Region for Enhanced Thermal Conductivity and RF Shielding
Globalfoundries U.S. Inc.
0 cites