7 Patents
- US126106012026Field Plate Biasing of High Electron Mobility Transistor
Infineon Technologies Canada Inc.
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- US123826522025Transistor Structure Using Multiple Two-dimensional Channels
Infineon Technologies Canada Inc.
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- US116997532023LDMOS Transistors Including Vertical Gates with Multiple Dielectric Sections, and Associated Methods
Maxim Integrated Products, Inc.
0 cites - US115575882023Multi-transistor Device Including First and Second LDMOS Transistors Having Respective Drift Regions Separated in a Thickness Direction by a Shared RESURF Layer
MAXIM INTEGRATED PRODUCTS, Inc.
0 cites