60 Patents
- US125573712026Semiconductor Structure and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125139532025Tuning Threshold Voltage in Nanosheet Transitor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US124777662025Semiconductor Transistor Device Structure Including Nanostructure and Gate Structure with Protection Layer and Fill Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124513592025Fluorine Incorporation Method for Nanosheet
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124190732025Device Having a Gate Electrode Wrapping Around Semiconductor Layers and Proximate to a Dielectric Fin
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123962482025Semiconductor Device Fabrication Methods and Structures Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123896752025Semiconductor Device Having Nanosheet Transistor and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123242192025Integrated Circuit Including Dipole Incorporation for Threshold Voltage Tuning in Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123157312025Integrated Circuit with Nanosheet Transistors with Metal Gate Passivation
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122886952025Method of Forming a Transistor Device Having Dipole-containing Gate Dielectric Layer and Fluorine-containing Gate Dielectric Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122666542025Finfet Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
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- US122373962025P-metal Gate First Gate Replacement Process for Multigate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122060052025Semiconductor Structures and Methods Thereof
TAIWAN SEMICONDICTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US121763912024Semiconductor Device Structure Having an Isolation Layer to Isolate a Conductive Feature and a Gate Electrode Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121702312024Gate-all-around Device with Trimmed Channel and Dipoled Dielectric Layer and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121661002024Nanosheet Device with Dipole Dielectric Layer and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121487502024Work Function Design to Increase Density of Nanosheet Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121192662024Semiconductor Arrangement and Method of Manufacture
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121193912024Fin-based Semiconductor Device Structure Including Self-aligned Contacts and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121071312024Gate-all-around Devices Having Self-aligned Capping Between Channel and Backside Power Rail
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120877712024Multiple Patterning Gate Scheme for Nanosheet Rule Scaling
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120877722024Nanosheet Device Architecture for Cell-height Scaling
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120683932024Etching Back and Selective Deposition of Metal Gate
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120626932024Semiconductor Device Structure and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120401912024Semiconductor Structures and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120211322024Gate Patterning Process for Multi-gate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119963342024Semiconductor Device Fabrication Methods and Structures Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119618402024Semiconductor Device Having Nanosheet Transistor and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119489872024Self-aligned Backside Source Contact Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119159372024Fluorine Incorporation Method for Nanosheet
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119013612024Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US118943672024Integrated Circuit Including Dipole Incorporation for Threshold Voltage Tuning in Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118944602024Semiconductor Device Having Nanosheet Transistor and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118699552024Integrated Circuit with Nanosheet Transistors with Robust Gate Oxide
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118626332024Work Function Design to Increase Density of Nanosheet Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118627002024Semiconductor Device Structure Including Forksheet Transistors and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118483682023Transistors with Different Threshold Voltages
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118309242023Nanosheet Device with Dipole Dielectric Layer and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US117569952023Method of Forming a Semiconductor Device Structure Having an Isolation Layer to Isolate a Conductive Feature and a Gate Electrode Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117284012023Semiconductor Structures and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117106672023Gate-all-around Device with Trimmed Channel and Dipoled Dielectric Layer and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116768662023Semiconductor Arrangement and Method of Manufacture
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116706922023Gate-all-around Devices Having Self-aligned Capping Between Channel and Backside Power Rail
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US116371952023Metal Gate Patterning Process Including Dielectric Fin Formation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116263272023Methods of Fabricating Semiconductor Devices with Mixed Threshold Voltages Boundary Isolation of Multiple Gates and Structures Formed Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116159622023Semiconductor Structures and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116005332023Semiconductor Device Fabrication Methods and Structures Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115946142023P-metal Gate First Gate Replacement Process for Multigate Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115631092023Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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