Manuj Nahar

12 Patents

• US124329282025

  Vertical Transistor, Integrated Circuitry, Method of Forming a Vertical Transistor, and Method of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US122371122025

  Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material

  Micron Technology, Inc.

  0 cites
• US122243102025

  Single-crystal Transistors for Memory Devices

  Micron Technology, Inc.

  0 cites
• US121913542025

  Vertical Transistors Having at Least 50% Grain Boundaries Offset Between Top and Bottom Source/drain Regions and the Channel Region That Is Vertically Therebetween

  Micron Technology, Inc.

  0 cites
• US120574722024

  Devices Comprising Crystalline Materials

  Micron Technology, Inc.

  0 cites
• US118715822024

  Vertical Transistor, Integrated Circuitry, Method of Forming a Vertical Transistor, and Method of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US118626682024

  Single-crystal Transistors for Memory Devices

  Micron Technology, Inc.

  0 cites
• US118567902023

  Ferroelectric Capacitors

  Micron Technology, Inc.

  0 cites
• US117283872023

  Semiconductor Devices Comprising Continuous Crystalline Structures, and Related Memory Devices and Systems

  Micron Technology, Inc.

  0 cites
• US116950712023

  Transistor and Methods of Forming Transistors

  Micron Technology, Inc.

  0 cites
• US116767682023

  Methods of Incorporating Leaker Devices Into Capacitor Configurations to Reduce Cell Disturb, and Capacitor Configurations Incorporating Leaker Devices

  Micron Technology, Inc.

  0 cites
• US115520862023

  Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Component Comprising Conductive Material and Ferroelectric Material

  Micron Technology, Inc.

  0 cites