Manjin Eom

2 Patents

• US125936132026

  Method of Fabricating Memory Device Including Magnetic Tunnel Junctions with Insulating Sidewalls

  Samsung Electronics Co., Ltd.

  0 cites
• US124083502025

  Semiconductor Devices Having Uppermost Interconnection Lines Protruding Beyond Top Surface of Lower Insulating Layer on Cell Region

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites