9 Patents
- US125139952025Substrates of Semiconductor Devices Having Varying Thicknesses of Semiconductor Layers
Globalfoundries U.S. Inc.
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- US122951612025Trench Isolation Having Three Portions with Different Materials, and LDMOS FET Including Same
Globalfoundries U.S. Inc.
0 cites - US121320802024Finfet with Shorter Fin Height in Drain Region Than Source Region and Related Method
GLOBALFOUNDRIES U.S. Inc.
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- US115455752023IC Structure with Fin Having Subfin Extents with Different Lateral Dimensions
Globalfoundries U.S. Inc.
0 cites