9 Patents
- US125506232026Nitride Diffusion Barrier Structure for Spintronic Applications
Headway Technologies, Inc.
0 cites - US125018362025Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US123568652025Multilayer Structure for Reducing Film Roughness in Magnetic Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122494502025Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120825092024Dual Magnetic Tunnel Junction (DMTJ) Stack Design
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118959282024Integration Scheme for Three Terminal Spin-orbit-torque (SOT) Switching Devices
Headway Technologies, Inc.
0 cites - US116839942023Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and Improved Coercivity Field (hc)/switching Current Ratio
Headway Technologies, Inc.
0 cites - US116092962023Method for Measuring Saturation Magnetization of Magnetic Films and Multilayer Stacks
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115694412023Maintaining Coercive Field After High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anistropy
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites