10 Patents
- US125385072026Semiconductor Device Having an Extrinsic Base Region with a Monocrystalline Region and Method Therefor
NXP B.V.
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- US121071432024Semiconductor Device with Extrinsic Base Region and Method of Fabrication Therefor
NXP B.V.
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- US117770022023Laterally-diffused Metal-oxide Semiconductor Transistor and Method Therefor
NXP USA, Inc.
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