Liqiao Qin

6 Patents

• US125686832026

  Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET

  International Business Machines Corporation

  0 cites
• US125576332026

  Multiple Critical Dimension Power Rail

  International Business Machines Corporation

  0 cites
• US125433582026

  Transition Metal Dichalcogenide (TMD) Transistor Structure

  International Business Machines Corporation

  0 cites
• US124904802025

  Stacked FETS with Contact Placeholder Structures

  International Business Machines Corporation

  0 cites
• US124514312025

  Stacked Semiconductor Devices with Topside and Backside Interconnect Wiring

  International Business Machines Corporation

  0 cites
• US117890642023

  Decoupling BTI and HCI Mechanism in Ring Oscillator

  International Business Machines Corporation

  0 cites