2 Patents
- US116315922023Etching Process with In-situ Formation of Protective Layer
Yangtze Memory Technologies Co., Ltd.
0 cites - US115852182023Drilling Device for Surveying Front Rock-mass Intactness of Tunnel Face for Tunnel Constructed by TBM and Method Using the Same
CHINA INSTITUTE OF WATER RESOURCES AND HYDROPOWER RESEARCH
0 cites