Patents/Inventors

Lingguo Zhang

HefeiCN7 patents

9 Patents

US124190412025
Method for Forming Storage Node Contact Structure and Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US123425352025
Memory Forming Method and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US121780362024
Method for Forming Memory and Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US121273972024
Memory Device and Method for Forming the Same
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US121273982024
Method for Manufacturing Memory Using Pseudo Bit Line Structures and Sacrificial Layers
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US119858152024
Method for Manufacturing Memory and Same
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US119744272024
Manufacturing Method of a Memory and a Memory
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US118715622024
Method for Forming Storage Node Contact Structure and Semiconductor Structure
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites
US118567582023
Method for Manufacturing Memory and Same
CHANGXIN MEMORY TECHNOLOGIES, Inc.
0 cites