24 Patents
- US125987482026Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125139062025Three-dimensional NAND Memory Device Having Word Line Contact with Dielectric Filler
Yangtze Memory Technologies Co., Ltd.
0 cites - US125016162025Memory System, Semiconductor Device and Fabrication Method Therefor
Yangtze Memory Technologies Co., Ltd.
0 cites - US124904302025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124329182025Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124190502025Semiconductor Device and Its Manufacturing Method, Memory and Memory System
Yangtze Memory Technologies Co., Ltd.
0 cites - US123961712025Method of Fabricating Three-dimensional NAND Memory
Yangtze Memory Technologies Co., Ltd.
0 cites - US1236389820253D NAND Memory Device with Non-uniform Channel Structure and Method for Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US122833222025Three-dimensional NAND Memory and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US122794292025Three-dimensional Memory Devices with Supporting Structure for Staircase Region and Spacer Structure for Contact Structure and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121365862024Semiconductor Devices Having a Conductive Layer Stacking with an Insulating Layer and a Spacer Structure Through the Conductive Layer
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121366182024Three-dimensional Memory Device with Backside Source Contact
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - 0 cites
- US120573722024Methods for Forming Contact Structures and Semiconductor Devices Including Forming a Spacer Structure Into a Base Structure
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120588582024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120481482024Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119013132024Methods for Forming Three-dimensional Memory Devices with Supporting Structure for Staircase Region
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117513942023Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117232012023Method of Forming Three-dimensional Memory Device with Epitaxially Grown Layers
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117168532023Method for Fabricating Three-dimensional Memory Device by Thickening an Epitaxial Layer
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116476322023Three-dimensional Memory Devices with Supporting Structure for Staircase Region
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116264162023Method for Forming Three-dimensional Memory Device with Backside Source Contact
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115749212023Three-dimensional Memory Device and Fabrication Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115629452023Semiconductor Device Having a Spacer Structure in a Conductive Layer and a Contact Structure in the Spacer Structure
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites