Patents/Inventors

Lianjuan Ren

WuhanCN2 patents

3 Patents

US118760162024
Methods for Forming Hole Structure in Semiconductor Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US118173482023
Methods for Forming Hole Structure in Semiconductor Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116315922023
Etching Process with In-situ Formation of Protective Layer
Yangtze Memory Technologies Co., Ltd.
0 cites