9 Patents
- US124647382025Integrated Chip Including a Device with a Reduced Surface Field Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124463252025Electrostatic Discharge Protection Circuit and Semiconductor Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US123639382025Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US121007572024Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119788102024Method for Forming an IC Including a Varactor with Reduced Surface Field Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119730762024Electrostatic Discharge Protection Circuit and Semiconductor Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US117424192023Cap Structure Coupled to Source to Reduce Saturation Current in HEMT Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites