3 Patents
- US125638052026Method for Fabricating Fully Depleted Silicon-on-insulator PMOS Devices
Shanghai Huali Integrated Circuit Corporation
0 cites - US123745822025Method for Making Silicon Epitaxy of a FDSOI Device
Shanghai Huali Integrated Circuit Corporation
0 cites - US119617402024Manufacturing Method for Integrating Gate Dielectric Layers of Different Thicknesses
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
0 cites