Patents/Inventors

Li-yang Chuang

HsinchuTW11 patents

12 Patents

US124904762025
Method and Device for Boosting Performance of Finfets via Strained Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US123961912025
Isolation Structures of Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123175282025
Gate Isolation Feature and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121660362024
Multi-gate Device and Related Methods
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121488302024
Method and Device for Boosting Performance of Finfets via Strained Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120627142024
Back End of Line Nanowire Power Switch Transistors
Taiwan Semiconductor Manufacturing, Co., Ltd.
0 cites
US120517382024
Isolation Structures of Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US120211362024
Gate Isolation Feature and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117990192023
Gate Isolation Feature and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116887362023
Multi-gate Device and Related Methods
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116644512023
Method and Device for Boosting Performance of Finfets via Strained Spacer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US115750342023
Back End of Line Nanowire Power Switch Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites